Ion Implantation Consumables and Repair Parts for AMAT^® / Varian^® Implanters

Ion Implantation consumables and machine maintenance and support for  80-10/120-10^™, 80XP^™, 160XP^™, 180XP^™, CF/DF^™ 4, 5, 3000^™, 350D^™, 300XP^™, E220^™, E500^™, Viision^™ 80/200, Viista 810^™, 900XP^™, HC^™, HCP^™

Varian^®‘s ion implanters, such as the E220^™, E500^™, and E500^™ HP, are machines that deliver a controlled dose and energy to the target material. These machines utilize advanced technologies like beam line control, dose control, and energy control to ensure consistent and reliable implantation results. The Varian^® implant systems are proven platforms with a wide range of processes utilized by a large global install base.

Varian^® offers a range of innovative ion implanters and monitors that ensure high-performance and accuracy. Varian^®‘s ion implanters, such as the E220^™, E500^™, and E500^™ HP, provide analogues of ion beams to deliver a controlled dose and energy to the target material. These machines utilize advanced technologies like beam line control, dose control, and energy control to ensure consistent and reliable implantation results. With customizable ion species, beam profiles, and energy ranges, Varian^®‘s implanters cater to various application needs.

Advantages of Varian^®‘s ion implanters include high throughput, increased efficiency, and superior process control. These machines feature advanced beam scanning techniques, precise beam positioning, and automatic calibration mechanisms. Additionally, Varian^®‘s implanters offer enhanced safety features, ensuring optimum operator protection. To monitor the ion implantation process, Varian^® provides advanced monitoring systems. These systems include real-time measurement and analysis capabilities to determine the implanted dose, beam current, and energy. Varian^® monitors enable precise control and fine-tuning of the ion implantation process, resulting in improved product quality and yield.

VARIAN^® E500^™ HP is a state-of-the-art ion implanter and monitor that is used to embed desired ions into silicon semiconductor wafers. The E500 utilizes mono- or multi-energy implanters to inject various ions into the wafer for the desired electronic properties. The multi-energy implant technology allows one to customize the implantation process using different beam settings ranging from low to high energies. This allows for a much more accurate doping control and reduces the risk of adverse effects such as over-doping or contamination.

VARIAN^® E500^™ HP is equipped with a wide range of advanced features that enhance the accuracy of the implantation process. The automated control equipment provides user-friendly operation, allowing for the exact dosing and beam energy parameters to be provided. In addition, the E500^™ includes an electronic beam current monitor that precisely monitors the beam current, beam position, and beam diameter. The high power electron optics system is designed to provide very high accuracy in implantations. This advanced unit measures the beam current multiple times a second to provide very accurate implantations.

Furthermore, the automated alignment machine allows for precise alignment of the beam. The E500^™ includes a real-time particle monitor to ensure the quality and uniformity of the wafers. This particle monitor allows for continuous measurement of particle size and charge that are necessary to ensure the electrical properties of the wafer. E-500HP^™ is designed with a number of safety features to protect both the user and the device. An emergency stop tool can be engaged if the device malfunctions. An additional shut-off asset will shut down the entire model automatically after a specified period of inactivity. E500HP^™ is a world-leading ion implanter and monitor that use state-of-the-art technology to provide accurate and precise ion implantation into silicon semiconductor wafers. The multi-energy implant technology enables one to customize the implantation process for the desired electronic properties. The advanced beam current monitor, high power electron optics equipment, and real-time particle monitor all ensure accuracy and uniformity in the implantation.

VARIAN^® 350D^™ is a dynamic ion implanter and monitor manufactured by Applied Materials, Inc. This advanced machine is designed to be used by departments specializing in semiconductor and thin films for processes requiring high-energy ions to be implanted in a material. VARIAN^® 350D^™ uses a new digital scanning algorithm to deliver highly precise ion implantation profiles that are suitable for a number of applications.

350D^™ utilizes a single, high-current gaussian source to achieve its precise and consistent implantation profile. Raw ion beams are first generated in the source chamber by using high-voltage electric fields. These ions are then energized prior to entering into the mass analyzer in a process known as mass selection. The mass selection process allows the user to set the optimal ion species, energy, and beam current for the implantation process.

The heart of 350D^™ is its computer-controlled high energy arc power supply that enables precise and precise implantation depth control. This advanced power system allows users to adjust implantation conditions with great accuracy, as well as the ability to shift current during the implantation process if necessary. Through combining the gaussian source and high-energy arc power supply, this machine provides an implantation energy range of up to 60keV.

VARIAN^® 350D^™‘s easy-to-use interface lets users monitor implantation processes quickly and accurately. This interface also contains built-in self-check functions, providing users with reassurance that everything is running to their desired specifications.

To protect the sensitive materials in the equipment, VARIAN^® 350D^™ is built with a sophisticated cooling and exhaust system, allowing the machine to operate internally without generating excess heat. 350D^™ sets a new standard for ion implantation technology. Its advanced features and reliable performance make it a great choice for semiconductor and thin film engineering departments. The machine’s precise implantation profiles and easy-to-use interface make 350D^™ a popular choice for critical processes requiring accurate and consistent result.

The VIISta^™ 3000XP, built on the acclaimed Varian^® dual-magnet single-wafer architecture, delivers the angle precision required for advanced high-energy applications.

Below the 65nm technology node, the limitations of conventional batch high-energy implanters create device performance issues for high-energy processes. Single-wafer architecture is required to achieve the precise angle control, dose control, and productivity demanded for high-volume manufacturing. The system has been developed to deliver superior metal contamination performance, which will benefit CMOS image sensor technology.

The VIISta^™ 3000XP is also ideally suited for medium-current back-up. The system features the same single-wafer end station, dosimetry system, and wafer positioning system as the market-leading medium-current VIISta 900XP.

VARIAN^® VIISTa^™ 810XP is a high-performance ion implanter and monitor that is designed to provide processes with superior results. This machine is capable of meeting the precision and accuracy requirements needed for today’s demanding semiconductor manufacturing environment. With a modern digital architecture, VARIAN^® VIISTA^™ 810 XP provides users with an intuitive control interface that is easy to use and powered by advanced monitoring algorithms. This allows users to have an efficient and simplified setup process with minimal operational errors.

VIISTa^™ 810XP offers a superior cycle time and processing speed which can improve throughput and reduce costs. The adaptive dose control equipment ensures that dose uniformity is consistent across the entire substrate surface, ensuring chips with reliable and consistent characteristics. Through an advanced control system, users are able to program multiple implantation parameters in the same cycle and reduce required setup times.

VIISTA^™ 810 XP can process workpieces up to 300mm in diameter and up to a 0.35mm thick substrate. This capacity gives users the flexibility to produce a wide variety of semiconductor structure fabrication styles in a single operation.

Additionally, the unit is capable of rapid high-energy ion and filter sputtering for thicker and larger substrates. The high-performance VARIAN^® VIISTa^™ 810XP has an advanced, configurable digital machine which allows the user to monitor process parameters such as current, voltage, temperature, and pressure. The tool can also be programmed to save and track output parameters, such as ion energies, currents, and acceleration voltages. This ensures that every implantation cycle is keep under constant control. VARIAN^® VIISTA^™ 810 XP has been designed to operate in any environment with minimal noise levels. The asset has a low-noise closed-loop ventilation model and a maintenance-free, high-performance turbo pump equipment. This ensures an efficient and silent operation which can help speed up the fabrication process. VIISTa^™ 810XP is an ideal choice for high-volume production of products requiring superior processes. With its easy setup, intuitive control, and enhanced monitoring algorithms, this ion implanter and monitor will help users maintain accurate manufacturing records and provide the highest degree of quality, reliability, and performance.

VARIAN^® 120XP is an ion implanter  composed of two components, the ion implanter and the monitor. The ion implanter uses energetic beams of ions to implant regions of material densely into a target substrate. It works in a raster scan pattern, allowing for highly precisely controlled implantation areas. The monitor is designed to measure, record, and analyze data from the implantation process in order to ensure optimal results.

VARIAN^® 120 XP is designed for use in the semiconductor industry for dynamic critical device applications. It offers several features that make it especially useful for ion implantation including a large working area, a powerful beam control electrode, and a high-performance etch chamber. Additionally, the system is compatible with a variety of implant source materials including boron, phosphorus, arsenic, and antimony. Its optimized beam spreading also allows for implants to be accurately placed across large substrates. 120XP features an advanced monitoring unit to help ensure that implants are performed accurately and precisely. It is equipped with two separate control panels – one for the monitor and one for the implanter – that measure the parameters of the beam during implantation. This includes the beam current, the energy fluence, angle of incidence, and the range of energy during the implant process, among other things.

Additionally, the implanter and monitors are designed to automatically pause if any irregularities are observed, allowing for corrections to be quickly and easily made when necessary. 120 XP utilizes advanced safety procedures as well. The machine is designed to be as safe as possible, with all personnel needed to maintain the tool being much further from the beam than many other ion implanters. Additionally, the chamber itself is constructed from highly-radiation-shielded materials to protect personnel from any hazardous radiation emissions.

Overall, VARIAN^® 120XP^™ is an advanced and highly-capable ion implantation asset designed for use in the production of semiconductor devices. It features a number of features that make it especially useful for high-precision device implants, including a high-powered beam control electrode, a large working area, and an advanced monitoring model. Additionally, its construction is highly safe and efficient, making it a desirable option for high-quality production.

The VIISta 900XP^™ delivers precision, cleanliness, productivity, and production worthiness in the medium current ion implantation market. In addition, an extended energy range that allows for operation at 300keV and 600keV with + and ++ charge states, respectively, makes the VIISta 900XP^™ more productive than traditional batch high-energy tools for sub-MeV well applications.

Repeatable and accurate implant angle control is critical for precision doping in high-volume manufacturing of advanced devices. The Varian^® Positioning System (VPS) ensures the required level of control over the full applications envelope. The VIISta 900XP^™ features the cleanest beam line in the industry. A filter magnet removes the majority off cross-species right at the source. The dual-magnet architecture isolates the wafer from beam-borne metals, particles, and other contamination in the analyzer magnet and the mass-resolving aperture regions. The VIISta 900XP^™ offers industry-leading 500WPH mechanical throughput. Single-wafer parallel path wafer handling, fast beam set-up times, and an option for higher beam current add to the tool’s impressive overall productivity.

The VIISta HCP^™ implanter leverages Varian^®‘s pioneering single-wafer high current technology to deliver high yields and the industry’s best productivity. Innovations on the dual-magnet ribbon beam architecture improve beam line transmission, on-wafer beam utilization, and beam current output. VIISta HCP’s dual-magnet ribbon beam architecture isolates the wafer from particles created by depositions and beam strike in the implant source chambers and beam line elements. The VIISta HCP^™ measures and adjusts beam steering by means of the closed-loop Varian^® Positioning System that delivers accurate, repeatable, and interlocked incident angle control for true zero-degree and precise tilted angle implants.

Applied Materials acquired Varian^® Semiconductor in May 2011.